A memory device comprising a access circuits, an electrode layer over the access circuits, an array of phase change memory bridges over the electrode layer, and a plurality of bit lines over the array of phase change memory bridges. The electrode layer includes electrode pairs. Electrode pairs include...http://www.google.de/patents/US20060284157?utm_source=gb-gplus-sharePatent US20060284157 - Thin film plate phase change RAM circuit and manufacturing method
