There is disclosed a high performance MOS transistor structure of either the N channel or P channel variety and a high performance bipolar transistor structure. A process is disclosed which can make high performance CMOS and high performance bipolar devices on the same die....http://www.google.de/patents/US4764480?utm_source=gb-gplus-sharePatent US4764480 - Process for making high performance CMOS and bipolar integrated devices on one substrate with reduced cell size
