Memory cells comprising: a semiconductor substrate having a source region and a drain region disposed below a surface of the substrate and separated by a channel region; a tunnel dielectric structure disposed above the channel region, the tunnel dielectric structure comprising at least one layer having...http://www.google.de/patents/US20060198189?utm_source=gb-gplus-sharePatent US20060198189 - Non-volatile memory cells, memory arrays including the same and methods of operating cells and arrays
