A method for fabricating silicon on insulator structures having a dislocation free silicon layer. The method utilizes low temperature UHVCVD to deposit a very heavily doped etch stop layer having a very steep doping profile onto a substrate and a lightly doped active layer onto the etch stop layer. An...http://www.google.de/patents/US5462883?utm_source=gb-gplus-sharePatent US5462883 - Method of fabricating defect-free silicon on an insulating substrate
