Methods of forming, in an integrated circuit, aluminum-silicon contacts with a barrier layer is disclosed. The barrier layer is enhanced by the provision of titanium oxynitride layers adjacent the silicide film formed at the exposed silicon at the bottom of the contact. The titanium oxynitride may be...http://www.google.de/patents/US6191033?utm_source=gb-gplus-sharePatent US6191033 - Method of fabricating an integrated circuit with improved contact barrier
