A method for determining device yield of a semiconductor device design, includes determining statistics of at least one MOSFET parameter from a gate pattern, and calculating device yield from the at least one MOSFET parameter. The method provides a direct simulation link from device layout to device...http://www.google.de/patents/US6562638?utm_source=gb-gplus-sharePatent US6562638 - Integrated scheme for predicting yield of semiconductor (MOS) devices from designed layout
