Disclosed is a silicon semiconductor substrate for a semiconductor integrated circuit such as LSI or VLSI. The silicon semiconductor substrate has an oxygen concentration ranging from 3.times.10.sup.17 cm.sup.-3 to 7.times.10.sup.17 cm.sup.-3 and a gettering layer on its backside. This gettering layer...http://www.google.de/patents/US4645546?utm_source=gb-gplus-sharePatent US4645546 - Semiconductor substrate
