A silicon film provided on a blocking film 102 on a substrate 101 is made amorphous by doping Si+, and in a heat-annealing process, crystallization is started in parallel to a substrate from an area 100 where lead serving as a crystallization-promoting catalyst is introduced....http://www.google.de/patents/US6924506?utm_source=gb-gplus-sharePatent US6924506 - Semiconductor device having channel formation region comprising silicon and containing a group IV element
