A lightly doped drain thin-film transistor having an inverted staggered structure. The transistor has a glass substrate and a gate formed by a Cr layer on the substrate. An insulating layer and a semiconductor layer are deposited on the substrate and the gate. A first photo-resist layer is coated...http://www.google.de/patents/US5780903?utm_source=gb-gplus-sharePatent US5780903 - Method of fabricating a lightly doped drain thin-film transistor
