In a ferroelectric memory cell having a plate line, a word line and a bit line coupled to a sense amplifier, a sensing method includes the steps of precharging the bit line to a logic one voltage, setting the word and plate lines to an initial logic zero voltage, stepping the word line from the initial...http://www.google.de/patents/US5530668?utm_source=gb-gplus-sharePatent US5530668 - Ferroelectric memory sensing scheme using bit lines precharged to a logic one voltage
