A semiconductor light emitting device in the present invention is formed by laminating an epitaxial layer 30 including an AlGaInP active layer and a second wafer 23 which transmits light derived from the active layer. The crystal axes of the epitaxial layer 30 and the second wafer 23 are generally aligned...http://www.google.de/patents/US7465962?utm_source=gb-gplus-sharePatent US7465962 - Semiconductor light emitting device and manufacturing method therefor
