A method for forming a sub-quarter micron MOSFET having an LDD structure is described. An active area is provided in a semiconductor substrate separated from other active areas by isolation regions. Ions are implanted into the semiconductor substrate in the active area wherein a heavily doped region...http://www.google.de/patents/US6049107?utm_source=gb-gplus-sharePatent US6049107 - Sub-quarter-micron MOSFET and method of its manufacturing
