The present invention provides various methods for forming a ground-plane SOI device which comprises at least a field effect transistor formed on a top Si-containing surface of a silicon-on-insulator (SOI) wafer; and an oxide region present beneath the field effect transistor, located in an area between...http://www.google.de/patents/US6432754?utm_source=gb-gplus-sharePatent US6432754 - Double SOI device with recess etch and epitaxy
