An improved short-channel complementary MOS transistor structure is provided. The problems of low punch-through voltage breakdown, and "short-channel effects" are particularly addressed and solved. Accurate and precise field protection of all area surrounding the channel, source and drain regions of...http://www.google.de/patents/US4131907?utm_source=gb-gplus-sharePatent US4131907 - Short-channel V-groove complementary MOS device
