The present invention relates to a ferroelectric polymer storage device including at least two stacked ferroelectric polymer memory structures that are arrayed next to at least two respective stacked topologies that are a pre-fabricated silicon substrate cavity that includes interlayer dielectric layers...http://www.google.de/patents/US7018853?utm_source=gb-gplus-sharePatent US7018853 - Stepped structure for a multi-rank, stacked polymer memory device and method of making same
