The invention is concerned with the fabrication of a MIS semiconductor device of high reliability by using a low-temperature process. Disclosed is a method of fabricating a MIS semiconductor device, wherein doped regions are selectively formed in a semiconductor substrate or a semiconductor thin film,...http://www.google.de/patents/US5523257?utm_source=gb-gplus-sharePatent US5523257 - Mis semiconductor device and method of fabricating the same
