Shifts in the apparent charge stored on a floating gate of a non-volatile memory cell can occur because of coupling of an electric field based on the charge stored in adjacent floating gates. The shift in apparent charge can lead to erroneous readings by raising the apparent threshold voltage, and consequently,...http://www.google.de/patents/US20070133297?utm_source=gb-gplus-sharePatent US20070133297 - NON-VOLATILE MEMORY READ OPERATIONS USING COMPENSATION CURRENTS
