In one example of the invention, a method for depositing a tantalum-containing material on a substrate in a process chamber is provided which includes exposing the substrate to a tantalum precursor that contains TAIMATA and to at least one secondary precursor to deposit a tantalum-containing material...http://www.google.de/patents/US7241686?utm_source=gb-gplus-sharePatent US7241686 - Atomic layer deposition of tantalum-containing materials using the tantalum precursor TAIMATA
