An oxide etch process practiced in magnetically enhanced reactive ion etch (MERIE) plasma reactor. The etching gas includes approximately equal amounts of a hydrogen-free fluorocarbon, most preferably C4F6, and oxygen and a much larger amount of argon diluent gas. The magnetic field is preferably maintained...http://www.google.de/patents/US6451703?utm_source=gb-gplus-sharePatent US6451703 - Magnetically enhanced plasma etch process using a heavy fluorocarbon etching gas
