A power MOSFET is provided that includes a substrate of a first conductivity type. An epitaxial layer also of the first conductivity type is deposited on the substrate. First and second body regions are located in the epitaxial layer and define a drift region between them. The body regions have a second...http://www.google.de/patents/US20020014658?utm_source=gb-gplus-sharePatent US20020014658 - High voltage power mosfet having low on-resistance
