A vertical gain memory cell including an n-channel metal-oxide semiconductor field-effect transistor (MOSFET) and p-channel junction field-effect transistor (JFET) transistors formed in a vertical pillar of semiconductor material is provided. The body portion of the p-channel transistor is coupled to...http://www.google.de/patents/US6756622?utm_source=gb-gplus-sharePatent US6756622 - Vertical gain cell and array for a dynamic random access memory and method for forming the same
