The method consists in establishing the ion bombardment parameters, in varying a regulation parameter in order to initiate deposition, in measuring at each instant the total pressure drop within the vacuum chamber with respect to the initial pressure and in controlling the total pressure drop by controllably...http://www.google.de/patents/US4124474?utm_source=gb-gplus-sharePatent US4124474 - Method and apparatus for controlling the deposition of films by reactive sputtering
