In a semiconductor device, a polycrystalline silicon layer is formed on a semiconductor substrate, and an HSG polycrystalline silicon layer is formed on the polycrystalline silicon layer. The HSG polycrystalline silicon is converted from an amorphous silicon layer. ...http://www.google.de/patents/US20010044182?utm_source=gb-gplus-sharePatent US20010044182 - SEMICONDUCTOR DEVICE HAVING HSG POLYCRYSTALLINE SILICON LAYER
