A method of manufacturing a semiconductor device, which comprises a step of forming an oxide film by oxidizing a surface of semiconductor layer in an atmosphere containing an oxygen-activated species at a temperature of over 550.degree. C. A method of manufacturing a semiconductor device, which comprises...http://www.google.de/patents/US6287988?utm_source=gb-gplus-sharePatent US6287988 - Semiconductor device manufacturing method, semiconductor device manufacturing apparatus and semiconductor device
