A semiconductor device according to an embodiment of the present invention includes: a transistor including, a gate insulator formed of an insulating layer deposited on a substrate, and a gate electrode formed of an electrode layer deposited on the insulating layer; a capacitor including, a first capacitor...http://www.google.de/patents/US7858465?utm_source=gb-gplus-sharePatent US7858465 - Semiconductor device comprising transistor and capacitor and method of manufacturing the same
