A memory cell structure includes a substrate having a bottom electrode at least partially disposed within the substrate; a pad disposed at least partially over the substrate; a phase change element having a chalcogenide material, disposed at least partially over the substrate and adjacent to the pad,...http://www.google.de/patents/US7683360?utm_source=gb-gplus-sharePatent US7683360 - Horizontal chalcogenide element defined by a pad for use in solid-state memories
