Method of fabricating a semiconductor device. The semiconductor device comprises a substrate, a high-k gate dielectric layer formed on the substrate, and a hydrogen-free gate electrode deposited on the high-k gate dielectric layer wherein the hydrogen-free gate electrode is conductive. The method comprises...http://www.google.de/patents/US6620713?utm_source=gb-gplus-sharePatent US6620713 - Interfacial layer for gate electrode and high-k dielectric layer and methods of fabrication
