A method for forming a tri-gate semiconductor device that includes a substrate and a dielectric layer formed on the substrate includes depositing a first dielectric layer on the dielectric layer and etching the first dielectric layer to form a structure. The method further includes depositing a second...http://www.google.de/patents/US6998301?utm_source=gb-gplus-sharePatent US6998301 - Method for forming a tri-gate MOSFET
