In a semiconductor integrated circuit device having a fine multilayer interconnection structure, a wiring material such as tungsten is formed on a predetermined part of the interior of a wiring layer-forming groove formed in a flat inter-layer insulating film by selective deposition. The flat inter-layer...http://www.google.de/patents/US5128744?utm_source=gb-gplus-sharePatent US5128744 - Semiconductor integrated circuit and method of manufacturing same
