There is provided an aluminum gate type thin film transistor integrated circuit having a matrix region and a region in which driving circuits thereof are formed wherein impurity regions are selectively formed on a semiconductor thin film in the form of islands and a gate insulation film is formed to...http://www.google.de/patents/US6690063?utm_source=gb-gplus-sharePatent US6690063 - Thin film semiconductor integrated circuit and method for forming the same
