A write word line is disposed right under a MTJ element. The write word line extends in an X direction, and side and lower surfaces of the write word line are coated with a hard magnetic material and yoke material. The hard magnetic material is magnetized by a surplus current passed through the write...http://www.google.de/patents/US7333359?utm_source=gb-gplus-sharePatent US7333359 - Magnetic random access memory
