A method of fabricating a gate of a transistor device on a semiconductor substrate, includes the steps of placing the substrate in a vacuum chamber of a plasma reactor and introducing into the chamber a process gas that includes oxygen while maintaining a vacuum pressure in the chamber. An oxide insulating...http://www.google.de/patents/US7214628?utm_source=gb-gplus-sharePatent US7214628 - Plasma gate oxidation process using pulsed RF source power
