The present invention pertains to a high-performance thin film transistor having a gate and an active region, whose active region comprises a poly-Si1xGex alloy material and a channel layer of silicon, in which the channel layer of silicon is interposed between the poly-Si1xGex alloy material and the...http://www.google.de/patents/US20030071307?utm_source=gb-gplus-sharePatent US20030071307 - High performance poly-SiGe thin film transistor and a method of fabricating such a thin film transistor
