High quality epitaxial layers of compound semiconductor materials can be grown overlying large silicon wafers by first growing an accommodating buffer layer on a silicon wafer. The accommodating buffer layer is a layer of monocrystalline oxide spaced apart from the silicon wafer by an amorphous interface...http://www.google.de/patents/US6590236?utm_source=gb-gplus-sharePatent US6590236 - Semiconductor structure for use with high-frequency signals
