The method for forming inter-metal dielectric layers in a metallization process mainly includes the following steps. At first, a semiconductor substrate having interconnection structures formed thereon is provided. A liner layer is formed to cover the interconnection structures and the substrate, and...http://www.google.de/patents/US6218285?utm_source=gb-gplus-sharePatent US6218285 - Method for forming inter-metal dielectric layers in metallization process
