An antifuse structure (20) and method of fabrication are provided. A first conductive layer (A) is etched according to a first mask (62a) having a first pattern and according to a second mask (64a) having a second pattern. A first insulative layer (30) is disposed over the first conductive layer (A)...http://www.google.de/patents/US5395797?utm_source=gb-gplus-sharePatent US5395797 - Antifuse structure and method of fabrication
