A new structure of a capacitor for a DRAM is disclosed herein. The structure of the capacitor includes a mushroom shape first storage node, a dielectric layer and a second storage node. The mushroom shape first storage node includes a base portion that is formed of polysilicon. A plurality of mushroom...http://www.google.de/patents/US5966612?utm_source=gb-gplus-sharePatent US5966612 - Method of making a multiple mushroom shape capacitor for high density DRAMs
