Method of forming a magnetic memory device are disclosed. In one embodiment, a first plurality of conductive lines are formed over a semiconductor workpiece. A plurality of magnetic material lines are formed over corresponding ones of the first plurality of conductive lines and a second plurality of...http://www.google.de/patents/US6692898?utm_source=gb-gplus-sharePatent US6692898 - Self-aligned conductive line for cross-point magnetic memory integrated circuits
