An NVM cell such as an NROM cell is formed using a portion of one ONO stack and an adjacent portion of a neighboring NROM stack. A gate structure is formed between (and atop) the two ONO portions, or “strips” (or “stripes”). This provides having two physically separated charge storage regions...http://www.google.de/patents/US7638835?utm_source=gb-gplus-sharePatent US7638835 - Double density NROM with nitride strips (DDNS)
