In an ion implantation system, wafer heating is reduced without significantly reducing wafer throughput. An ion beam is time shared between two or more target positions in the system. The ion beam repeatedly is deflected to each target position for a time interval which is small in comparison with the...http://www.google.de/patents/US4433247?utm_source=gb-gplus-sharePatent US4433247 - Beam sharing method and apparatus for ion implantation
