A process for producing monocrystalline semiconductor layers. In an exemplary embodiment, a graded Si1xGex (x increases from 0 to y) is deposited on a first silicon substrate, followed by deposition of a relaxed Si1yGey layer, a thin strained Si1zGez layer and another relaxed Si1yGey layer. Hydrogen...http://www.google.de/patents/US6737670?utm_source=gb-gplus-sharePatent US6737670 - Semiconductor substrate structure
