A method of growing bulk single crystals of an AlN on a single crystal seed is provided, wherein an AlN source material is placed within a crucible chamber in spacial relationship to a seed fused to the cap of the crucible. The crucible is heated in a manner sufficient to establish a temperature gradient...http://www.google.de/patents/US20070257333?utm_source=gb-gplus-sharePatent US20070257333 - Seeded growth process for preparing aluminum nitride single crystals
