A process for fabricating thin film transistors is disclosed, which comprises a two-step laser annealing process as follows: crystallizing the channel portion by irradiating the channel portion with an irradiation beam; and modifying the electric properties of the source and the drain by irradiating...http://www.google.de/patents/US7018874?utm_source=gb-gplus-sharePatent US7018874 - Method for fabricating thin-film transistor
