A method of fabricating a DRAM integrated circuit structure (30) and the structure so formed, in which a common interconnect material (42, 48) is used as a first level interconnection layer in both an array portion (30a) and periphery portion (30p) is disclosed. The interconnect material (42, 48) consists...http://www.google.de/patents/US6150214?utm_source=gb-gplus-sharePatent US6150214 - Titanium nitride metal interconnection system and method of forming the same
