A fully-depleted (FD) Silicon-on-Insulator (SOI) MOSFET access transistor comprising a gate electrode of a conductivity type which is opposite the conductivity type of the source/drain regions and a method of fabrication are disclosed....http://www.google.de/patents/US8148225?utm_source=gb-gplus-sharePatent US8148225 - Fully-depleted (FD)(SOI) MOSFET access transistor and method of fabrication
