Structures and fabrication methods for a memory are provided. The memory includes an array of memory cells, where each memory cell has a pillar extending outwardly from a substrate. The pillar includes a first contact layer and a second contact layer separated by an insulating layer. A transistor is...http://www.google.de/patents/US7489002?utm_source=gb-gplus-sharePatent US7489002 - Memory having a vertical transistor
