A process for forming deep trenches on a surface of a semiconductor substrate by forming a mask on the surface of the semiconductor, which prescribes the position of the trenches; and then dry etching the semiconductor surface using a gas mixture comprising (1) an etchant, bromine containing, gas which...http://www.google.de/patents/US5423941?utm_source=gb-gplus-sharePatent US5423941 - Dry etching process for semiconductor
