A semiconductor device having a silicon-on-insulator (SOI) structure includes a lower silicon substrate and an upper silicon pattern electrically insulated from the lower silicon pattern by an isolating insulation layer buried by a reverse T-type hole formed in the lower silicon substrate. A gate insulation...http://www.google.de/patents/US6448115?utm_source=gb-gplus-sharePatent US6448115 - Semiconductor device having quasi-SOI structure and manufacturing method thereof
