An ion source is provided wherein depositing gas and/or maintenance gas is/are introduced into the ion source via the vacuum/depositing chamber, thereby reducing the amount(s) of undesirable insulative build-ups on the anode and/or cathode of the source in an area proximate the electric gap between the...http://www.google.de/patents/US6988463?utm_source=gb-gplus-sharePatent US6988463 - Ion beam source with gas introduced directly into deposition/vacuum chamber
