A technique for forming a gettering layer in a wafer made using a controlled cleaving process. The gettering layer can be made by implanting using beam line or plasma immersion ion implantaion, or made by forming a film of material such as polysilicon by way of chemical vapor deposition. A controlled...http://www.google.de/patents/US6890838?utm_source=gb-gplus-sharePatent US6890838 - Gettering technique for wafers made using a controlled cleaving process
